Enhancing the ultraviolet response of silicon photodetectors using Yb~(3+)-doped CsPbCl_2Br nanocrystals glass with self-crystallization inhibited by ZnO

摘要

All-inorganic CsPbX_3 (X = Cl, Br, I) perovskite nanocrystals (NCs) are the most promising next generation photoelectric materials owing to their excellent properties. Although embedding perovskite NCs into a glass matrix improves their stability, different applications require perovskite nanocrystal glasses (PNGs) with different properties. In this work, we controlled the network structure of the precursor glass by changing the content of ZnO (3.8-11.4 mol. %) in the raw materials, thus inhibiting the direct precipitation of CsPbCl_2Br NCs in the glass (i.e., the self-crystallization process), and obtained samples with local emission and high transmittance. In addition, we incorporated rare-earth (RE) Yb~(3+) into a CsPbCl_2Br PNG to achieve efficient ultraviolet (UV) to near-infrared quantum cutting emissions and boost the UV response of silicon photodetectors (PDs). Finally, after combining the Yb~(3+)-doped CsPbCl_2Br PNG on the Si PDs, the responsivity of the latter increased to 0.014 A/W at 320 nm, which is 14 times higher than that of the bare Si PDs. Moreover, Si PDs based on Yb~(3+)-doped CsPbCl_2Br PNG exhibited excellent photocurrent stability.