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首页> 外文期刊>Applied Physics Letters >Anisotropic epsilon-near-pole (ENP) resonance leads to hyperbolic photonic dispersion in homologous (Bi_2)m(Bi_2Se_3)_n topological quantum materials
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Anisotropic epsilon-near-pole (ENP) resonance leads to hyperbolic photonic dispersion in homologous (Bi_2)m(Bi_2Se_3)_n topological quantum materials

机译:各向异性epsilon - 近极(ENP)谐振导致同源(Bi_2)M(Bi_2Se_3)_N拓扑量子材料中的双曲线光子分散体

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摘要

The hyperbolic iso-frequency surface (dispersion) of photons in materials that arise from extreme dielectric anisotropy is the latest frontier in nano-photonics with potential applications in subwavelength imaging, coherent thermal emission, photonic density of state engineering, negative refraction, thermal hyperconductivity, etc. Most hyperbolic materials utilize nanoscale periodic metal/dielectric multilayers (superlattices) or metallic nanowires embedded inside the dielectric matrix that require expensive growth techniques and possess significant fabrication challenges. Naturally occurring bulk materials that exhibit tunable hyperbolic photonic dispersion in the visible-to-near-IR spectral ranges will, therefore, be highly beneficial for practical applications. Due to the layered structure and extreme anisotropy, a homologous series of (Bi_2)_m(Bi_2Se_3)_n could serve as a unique class of natural hyperbolic material with tunable properties derived from different stoichiometry. In this Letter, we demonstrate hyperbolic photonic dispersion in a single crystal of weak topological insulator BiSe (m = 1 and n = 2), where a Bi_2 layer is inserted between Bi_2Se_3 (m = 0 and n = 1) quintuple layers in the visible (525-710 nm) and near-UV (210-265 nm) spectral range. The origin of hyperbolic dispersion in homologous (Bi_2)_m(Bi_2Se_3)_n topological quantum materials arises from their anisotropic epsilon-near-pole resonance corresponding to the interband transitions that lead to different signs of its dielectric permittivity. The tunability of hyperbolic dispersion is further demonstrated by alloying Bi_2Se_3 with Mn that alters the interband transition positions and expands their hyperbolic spectral regime from 500-1045 to 500-1185 nm.
机译:从极端介电各向异性产生的材料中光子的双曲线ISO频率表面(分散体是纳米光子的最新前沿,具有潜在应用的潜在应用,在亚波长成像,相干热排放,状态工程光子密度,负折射,热超导电性,等等。大多数双曲线材料利用纳米级周期金属/介电多层(超晶格)或嵌入在介电基质内的金属纳米线,其需要昂贵的生长技术并且具有显着的制造挑战。因此,在可见的近红外光谱范围内表现出可调双曲光子色散的自然发生的散装材料将是对实际应用的高度有益。由于层状结构和极端各向异性,一种同源系列(Bi_2)_M(Bi_2Se_3)_N可以用作独特的自然双曲材料,具有来自不同化学计量的可调性。在这封信中,我们在弱拓扑绝缘体BISE(M = 1和N = 2)的单晶中展示了双曲线光子分散,其中Bi_2层在可见的Bi_2Se_3(M = 0和N = 1)Quintuple层之间插入Bi_2层(525-710 nm)和近UV(210-265nm)光谱范围。同源(Bi_2)_M(Bi_2Se_3)_N拓扑量子材料中的双曲分散的起源来自对应于与其介电常数的不同迹象的基极转变相对应的各向异性epsilon近极谐振。通过用Mn的合金化Bi_2Se_3进一步证明了双曲分散性的可调节性,该MN改变了间带式过渡位置,并将其双曲光谱制度从500-1045扩展到500-1185nm。

著录项

  • 来源
    《Applied Physics Letters》 |2021年第1期|011902.1-011902.6|共6页
  • 作者单位

    Chemistry and Physics of Materials Unit Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India School of Advanced Materials Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India;

    New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India;

    International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India School of Advanced Materials Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India;

    Chemistry and Physics of Materials Unit Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India School of Advanced Materials Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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