Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

摘要

In this paper we present a detailed analysis of the degradation of InGaN-based laser diodes carriednout by means of electrical and optical techniques. The study is based on the comparison between thendegradation kinetics of laser diodes and light-emitting diode u0002LEDu0003-like samples, i.e., devices withnthe same epitaxial structure as the lasers, but with no ridge and facets. Results described in thenfollowing indicate that degradation of lasers and LED-like samples is due to the same mechanism,npossibly involving the generation of point defects within the active region of the devices.nFurthermore, since degradation occurs both in lasers and in LED-like samples u0002i.e., structures withnno current confinementu0003, results suggest that degradation of lasers is not correlated with thengeometry of the devices, nor to worsening of current confinement under the ridge. © 2010 AmericannInstitute of Physics. u0004doi:10.1063/1.3527088