Measurement of the hot electron attenuation length of copper

摘要

Ballistic electron emission microscopy is utilized to investigate the hot-electron scattering propertiesnof Cu through Cu/Siu0001001u0002 Schottky diodes. A Schottky barrier height of 0.64u00010.02 eV and anhot-electron attenuation length of 33.4u00012.9 nm are measured at a tip bias of 1.0 eV and antemperature of 80 K. The dependence of the attenuation length with tip bias is fit to a Fermi liquidnmodel that allows extraction of the inelastic and elastic scattering components. This modelingnindicates that elastic scattering due to defects, grain boundaries, and interfaces is the dominantnscattering mechanism in this energy range.