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Free-standing and flexible graphene supercapacitors of high areal capacitance fabricated by laser holography reduction of graphene oxide

机译:通过激光全息减少石墨烯氧化物制造的高架电容的独立式和柔性石墨烯超级电容器

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摘要

Photoreduction of graphene oxide (GO) holds great potential for developing graphene-based electrodes for high-performance supercapacitors (SCs). However, the insufficient micro-nanostructure on photoreduced GO (PRGO) restricts its electrochemical performance. Here, a hierarchically structured PRGO-based planar SC is reported by combining two-beam-laser-interference with the masking technique. The hierarchical structures improve the surface area between PRGO and electrolyte and contribute to format electric double-layer capacitors. Planar device structures with PRGO-based interdigital finger current collectors are beneficial for rapid ion diffusion paths. As a result, the hierarchically structured PRGO-based planar SC achieves an areal capacitance of 3.97 mFcm~(-2) at 10mVs~(-1). The proposed strategy of employing hierarchically structured PRGO in the planar SC design offers a new route for manufacturing high-performance integrated energy storage devices.
机译:石墨烯氧化物(GO)的光学施加具有显影基于石墨烯的电极的高性能超级电容器(SCS)。然而,光度诱导的GO(PRGO)上的微纳米结构不足限制了其电化学性能。这里,通过将双光束激光干扰与掩蔽技术组合来报告分层结构的基于PROS的平面SC。等级结构改善了PRGO和电解质之间的表面积,并有助于格式化电双层电容器。具有PRO基于PRO的叉指手指电流收集器的平面装置结构对于快速离子扩散路径有益。结果,分层结构的基于PRO的平面SC在10mV〜(-1)下实现了3.97mFcm〜(-2)的面积电容。在Planar SC设计中使用分层结构PRGO的拟议策略为制造高性能集成储能设备提供了新的路线。

著录项

  • 来源
    《Applied Physics Letters》 |2021年第7期|071601.1-071601.4|共4页
  • 作者单位

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education 3ilin Normal University Changchun 130103 China;

    Department of Dental Implantology Hospital of Stomatology Jilin University Changchun 130021 Jilin China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;

    State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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