机译:Cu掺杂SB_2TE_3拓扑绝缘体中的异常和拓扑霍尔效应
Department of Physics Indian Institute of Technology (Banaras Hindu University) Varanasi 221005 India Department of CMP and MS Tata Institute of Fundamental Research Mumbai-400005 India;
Department of Physics Indian Institute of Technology (Banaras Hindu University) Varanasi 221005 India;
Department of Physics D.D.U. Gorakhpur University Gorakhpur 27300 India;
Department of Physics Indian Institute of Technology (Banaras Hindu University) Varanasi 221005 India;
Department of Physics Indian Institute of Technology (Banaras Hindu University) Varanasi 221005 India;
Hiroshima Synchrotron Radiation Center Hiroshima University Higashi-Hiroshima City 739-0046 Japan;
Acoustics Instrumentation and Mechanical Systems Group CSIR-Central Building Research Institute Roorkee Roorkee 247667 India;
Rajshree Institute of Management and Technology 16th km Pilibhit Road Bareilly 243122 India;
Physics Department Faculty of Engineering and Technology M.J P. Rohilkhand University Bareilly 243006 India;
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China;
Department of Physics Indian Institute of Technology (Banaras Hindu University) Varanasi 221005 India;
机译:Cu掺杂Bi2te3拓扑绝缘体中的异常霍尔效应
机译:磁性拓扑绝缘体夹层异质结构的量子异常霍尔和拓扑霍尔效应的同意
机译:非磁性掺杂诱导拓扑绝缘体中的量子异常霍姆效应
机译:硅丙烯的拓扑绝缘体:量子大厅,量子旋转厅和量子异常霍尔效应
机译:磁性拓扑绝缘体和量子异常霍尔效应。
机译:磁掺杂拓扑绝缘体中的两成分异常霍尔效应
机译:作者校正:双组分异常霍尔效应在磁掺杂拓扑绝缘体中