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Observation of surface dominated topological transport in strained semimetallic ErPdBi thin films

机译:应变半机ERPDBI薄膜表面占主导地位拓扑输送的观察

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摘要

In this Letter, we present experimental observation of surface-dominated transport properties in [110]-oriented strained (~1.6%) ErPdBi thin films. The resistivity data show typical semi-metallic behavior in the temperature range of 3 K ≤ T ≤ 350 K with a transition from semiconductor- to metal-like behavior below 3 K. The metallic behavior at low temperature disappears entirely in the presence of an external magnetic field > 1 T. The weak-antilocalization (WAL) effect is observed in magneto-conductance data in the low magnetic field region and follows the Hikami-Larkin-Nagaoka (HLN) model. HLN fitting estimated single coherent channel, i.e., α ~ -0.51 at 1.9 K, and the phase coherence length (L_Φ) shows the L_Φ, ~ T~(0.52) power law dependence on temperature in the range of 1.9 K-10 K, indicating the observation of 2D WAL. Shubnikov-de Haas (SdH) oscillations are observed in magneto-resistance data below 10 K and are fitted to standard Lifhsitz Kosevich theory. Fitting reveals the effective mass of charge carriers ~0.15 m_e and a finite Berry phase of 0.86π ± 0.16. The sheet carrier concentration and mobility of carriers estimated using SdH data are n_s ~ 1.35 × 10_(12) cm_(-2) and μ_s= 1210cm~2 V_(-1) s~(-1) respectively, and match well with the data measured using the Hall measurement at 1.9 K to be n ~ 1.22 × 10~(12) cm~(-2), μ = 1035 cm~2 V_(-1) s_(-1). These findings indicate the non-trivial nature and surface-dominated transport properties of strained (110) ErPdBi thin films at low temperatures.
机译:在这封信中,我们在[110] - oriented应变(〜1.6%)ERPDBI薄膜中存在对表面固定的运输性能的实验观察。电阻率数据显示在3k≤T≤350k的温度范围内的典型半金属行为,从半导体 - 金属样行为的转变为3 k。低温下的金属行为完全在外部存在下消失磁场> 1T。在低磁场区域中的磁电导数据中观察到弱蚀弱化(WAL)效应,并遵循Hikami-Larkin-Nagaoka(HLN)模型。 HLN拟合估计的单相干通道,即1.9 k的α〜0.51,相干长度(L_φ)显示L_φ,〜t〜(0.52)电力法在1.9 k-10 k范围内依赖温度,表明2D沃尔的观察。 Shubnikov-de Haas(SDH)在低于10 k以下的磁阻数据中观察到振动,并安装在标准Lifhsitz Kosevich理论上。拟合揭示了电荷载体的有效质量〜0.15m_e,有限浆液相0.86π±0.16。使用SDH数据估计的载体载波浓度和迁移率分别是N_S〜1.35×10_(12)cm _( - 2)和μ_s= 1210cm〜2v _( - 1)s〜(-1),并与之匹配使用霍尔测量测量的数据以1.9 k为n〜1.22×10〜(12)cm〜(-2),μ= 1035cm〜2 V _( - 1)S _( - 1)。这些发现表明在低温下应变(110)ERPDBI薄膜的非普通性质和表面固定的传输性能。

著录项

  • 来源
    《Applied Physics Letters》 |2020年第13期|132406.1-132406.6|共6页
  • 作者单位

    Department of Physics Indian Institute of Technology Delhi Hauz Khas New Delhi-110016 India;

    Department of Physics Indian Institute of Technology Delhi Hauz Khas New Delhi-110016 India Department of Mechanical Engineering Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India;

    Tata Institute of Fundamental Research Homi Bhabha Road Mumbai-400005 India;

    Department of Microtechnology and Nanoscience Chalmers University of Technology SE 41296 Goeteborg Sweden;

    Department of Physics Indian Institute of Technology Delhi Hauz Khas New Delhi-110016 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 22:18:01

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