Phononic bandgap and phonon anomalies in HfN and HfN/ScN metal/semiconductor superlattices measured with inelastic x-ray scattering

摘要

Epitaxial metal/semiconductor superlattice heterostructures with lattice-matched abrupt interfaces and suitable Schottky barrier heights are attractive for thermionic energy conversion, hot electron-based solar energy conversion, and optical hyperbolic metamaterials. HfN/ScN is one of the earliest demonstrations of epitaxial single-crystalline metal/semiconductor heterostructures and has attracted significant interest in recent years to harness its excellent properties in device applications. Although the understanding of the mechanism of thermal transport in HfN/ScN superlattices is extremely important for their practical applications, not much attention has been devoted to measuring their phonon dispersion and related properties. In this Letter, we employ non-resonant meV-resolution inelastic x-ray scattering to determine the momentum-dependent phonon modes in epitaxial metallic HfN and lattice-matched HfN/ScN metal/semiconductor superlattices. HfN exhibits a large phononic bandgap (～40 meV) and Kohn anomaly in the longitudinal and transverse acoustic phonon modes at q ～ 0.73 along the [100] and [110] directions of the Brillouin zone due to the nesting of the Fermi surface by the wave vector (q). The in-plane [100] acoustic phonon dispersion of the HfN/ScN superlattices is found to be dominated by the HfN phonons, while the optical phonons exhibit both ScN and HfN characteristics. First-principles density functional perturbation theory modeling is performed to explain the experimental phonon spectra, and temperature-dependent thermal conductivity is measured using a pump-probe spectroscopic technique. These results will help understand the phonons in HfN and HfN/ScN metal/semiconductor superlattices for thermionic energy conversion.