机译:底物依赖于单层WS_2的Terahertz响应
School of Materials Science and Physics China University of Mining and Technology Xuzhou 221116 People's Republic of China;
School of Materials Science and Physics China University of Mining and Technology Xuzhou 221116 People's Republic of China;
Department of Physics and Center for Nanointegration University of Duisburg-Essen Lotharstrasse 1 47057 Duisburg Germany Department of Physics University of Antwerp Croenenborgerlaan 171 B-2020 Antwerpen Belgium;
Low Carbon Energy Institute China University of Mining and Technology Xuzhou 221116 People's Republic of China;
Key Laboratory of Materials Physics Institute of Solid State Physics Chinese Academy of Sciences Hefei 230031 People's Republic of China School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information Yunnan University Kunming 650091 China;
Department of Physics University of Antwerp Croenenborgerlaan 171 B-2020 Antwerpen Belgium School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information Yunnan University Kunming 650091 China;
机译:用AU-Ti基材热诱导单层WS_2的反应
机译:用原子平梯田在SRTIO_3衬底上单层WS_2的量化激子激灭湮灭
机译:表面等离子体增强了离子束改性功能基板上的单层WS_2的光致发光
机译:WS_2和WSE_2在SiO_2 / Si衬底上的层数相关的反射光谱
机译:烷烃硫醇自组装单分子层,反应性自组装单分子层,扁平金纳米颗粒/铟锡氧化物基质的生长介质和温度依赖性结构相的扫描隧道显微镜研究,以及互补金属氧化物中局部机械应力表征的扫描表面光电压显微镜研究半导体器件。
机译:太赫兹时域光谱法测量不同衬底上单层六方氮化硼的光电性能
机译:通过Terahertz时域光谱测量的不同基材上单层六方氮化物的光电性能