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Electronic structure of the clean interface between single crystal CH_3NH_3Pbl_3 and an organic hole transporting material spiro-OMeTAD

机译:单晶CH_3NH_3PBL_3和有机孔输送材料之间的清洁接口的电子结构螺旋 - 欧姆特

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摘要

Methylammonium lead triiodide (CH_3NH_3PbI_3) is a fundamental material used for prototypical perovskite solar cells. The electronic properties of the interface between CH_3NH_3PbI_3 and hole transporting materials play a crucial role in the efficient performance of these solar cells. However, the intrinsic characteristics of the interfaces where these materials directly come into contact with each other have not yet been defined since previous studies were performed using polycrystalline thin films of CH_3NH_3PbI_3, which were confirmed to contain a considerable amount of impurities. In this study, x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy were conducted to determine the interfacial electronic structure between CH_3NH_3PbI_3 and 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (spiro-OMeTAD) on the clean interface formed on the impurity-free single crystal surface of CH_3NH_3PbI_3. Spontaneous hole injection from CH_3NH_3PbI_3 to spiro-OMeTAD occurred at the direct contact sites between these materials, a phenomenon that was confirmed to be hindered by the presence of impurities at the interface.
机译:甲基丙基铅三碘化物(CH_3NH_3PBI_3)是用于原型钙钛矿太阳能电池的基本材料。 CH_3NH_3PBI_3和空穴传输材料之间的界面的电子特性在这些太阳能电池的有效性能下起着至关重要的作用。然而,在使用CH_3NH_3PBI_3的多晶薄膜进行之前的研究,尚未定义这些材料的界面的内在特征尚未定义,这些材料通过CH_3NH_3PBI_3的多晶薄膜进行,该研究证实含有相当大量的杂质。在该研究中,进行了X射线光电子能谱和紫外光电子光谱,以确定CH_3NH_3PBβ3和2,2'之间的界面电子结构,7,7'-四 - (N,N-DI-P-甲氧基氧基氨基)-9, 9'-螺氟烯(Spiro-Ometad)在CH_3NH_3PBI_3的无杂质单晶表面上形成的清洁界面上。从CH_3NH_3PBI_3到螺纹孔的自发空穴注入发生在这些材料之间的直接接触部位,这是通过界面处存在杂质的杂质阻碍的现象。

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  • 来源
    《Applied Physics Letters》 |2020年第22期|223902.1-223902.5|共5页
  • 作者单位

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

    Research Center for Advanced Science and Technology The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8904 Japan;

    Research Center for Advanced Science and Technology The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8904 Japan;

    High Energy Accelerator Research Organization (KEK) and SOKENDAI 1-1 Oho Tsukuba 305-0801 Japan;

    Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 278-8501 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 22:17:55

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