Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

摘要

We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature- and substrate-dependence of the size distributions of droplets and QDs, as well as the relative roles of Ga/N diffusivity and GaN nucleation rates on QD formation. We report on two competing mechanisms mediated by Ga surface diffusion, namely, QD formation at or away from pre-existing Ga droplets. We discuss the relative roles of nucleation- and coarsening-dominant growth, as well as zincblende vs wurtzite polytype selection, on various substrates. These insights provide an opportunity for tailoring QD size distributions and polytype selection for a wide range of 1II-N semiconductor QDs.