Electric-field-controllable nonvolatile multilevel resistance switching of Bi_(0.93)Sb_(0.07)/PMN-0.29PT(111) heterostructures

摘要

Electric-field switchable multilevel nonvolatile resistance states are achieved at room temperature in Bi0.93Sb0.07/0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3)(111) (PMN-0.29PT) heterostructures. During the initial poling of the PMN-0.29PT, the variation of the resistance of the Bi0.93Sb0.07 film with the electric field tracks the variation of the electric-field-induced in-plane strain of the PMN-0.29PT effectively, revealing that the resistance switching is dominated by the ferroelectric-domain-switching-induced lattice strain but not the domain-switching-induced polarization charges. A relative resistance change Delta R/R similar to 7% at 300K and up to similar to 10% at 180K were achieved near the coercive field E-C of the PMN-0.29PT(111) substrate. At least five stable resistance states with good endurance properties could be obtained at room temperature by precisely controlling the electric-field pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-0.29PT to the film, providing a simple and energy efficient way to construct multistate resistive memory. Published by AIP Publishing.