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Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO_(2)

机译:离子辐照的应力图:SiO_(2)中辐射诱导的粘弹性现象之间深度分辨的动态竞争

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摘要

The dynamic competition between structural transformation, Newtonian viscous flow, and anisotropic strain generation during ion irradiation of SiO_(2), leads to strongly depth-dependent evolution of the mechanical stress, ranging between compressive and tensile. From independent in situ stress measurements during irradiation, generic expressions are derived of the nuclear stopping dependence of both the structural transformation rate and the radiation-induced viscosity. Using these data we introduce and demonstrate the concept of a "stress map" that predicts the depth-resolved saturation stress in SiO_(2) for any irradiation up to several MeV.
机译:SiO_(2)离子辐照过程中结构转变,牛顿粘性流和各向异性应变产生之间的动态竞争,导致机械应力的深度依赖于演化,范围介于压缩和拉伸之间。从辐射过程中独立的原位应力测量中,可以得出结构转变速率和辐射诱导的粘度对核停止的依赖性的通用表达式。利用这些数据,我们介绍并演示了“应力图”的概念,该概念可预测SiO_(2)中深度解析的饱和应力,直至任何MeV辐照。

著录项

  • 来源
    《Applied Physics Letters》 |2004年第3期|p.389-391|共3页
  • 作者单位

    FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, NL-1098 SJ Amsterdam, The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

  • 入库时间 2022-08-18 03:23:21

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