Radiative and Auger recombination in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

摘要

We report on the pressure dependence of the threshold current in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured at low temperatures ～100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ～100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ～100 to 300 K.