Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

摘要

Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E_(+) transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers.