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Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

机译:缓冲层诱导的势垒减少:隧穿在有机发光器件中的作用

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Based on the WKB approximation of the tunneling model, we calculate the J- V characteristics of organic light-emitting devices (OLEDs) having buffer layers of different thickness. The results show how the insertion of a buffer layer with proper thickness lowers the OLED turn-on voltage. Further calculation suggests some parameters, such as the resistivity ratio and the position of the conduction band minimum of the buffer layer relative to the lowest unoccupied molecular orbital of the organic layer, are important in selecting a buffer material. A quantitative estimation of the optimal buffer layer thickness is also presented to serve as a guide to device design. The model is validated by comparison of its predictions to experimental results.
机译:基于隧道模型的WKB近似,我们计算具有不同厚度缓冲层的有机发光器件(OLED)的J-V特性。结果表明,插入具有适当厚度的缓冲层如何降低OLED的开启电压。进一步的计算表明,某些参数,例如电阻率和缓冲层的导带最小值相对于有机层的最低未占据分子轨道的位置,对于选择缓冲材料很重要。还提出了对最佳缓冲层厚度的定量估计,以作为器件设计的指南。通过将其预测与实验结果进行比较来验证该模型。

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