Electrical activation of the Fe~(2+/3+) trap in Fe-implanted InP

摘要

We have studied the electrical activation of the Fe~(2+/3+) trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe~(2+/3+) deep trap, located at E_C-0.66 eV. The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.