首页> 外文期刊>Applied Physics Letters >Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba[Mg_(1/3)(Nb_(x/4)Ta_((4-x)/4))_(2/3)]O_3 ceramics
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Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba[Mg_(1/3)(Nb_(x/4)Ta_((4-x)/4))_(2/3)]O_3 ceramics

机译:Ba [Mg_(1/3)(Nb_(x / 4)Ta _((4-x)/ 4))_(2/3)] O_3陶瓷中超晶格和反相畴边界对介电损耗的影响

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摘要

The Ba[Mg_(1/3)(Nb_(x/4)Ta_((4-x)/4))_(2/3)]O_3 ceramics (x = 0, 1, 2, 3, and 4) synthesized by a solid reaction method were sintered at 1650℃ for 9 h. The quality factor (Q, ~ 1/tan δ, tan δ: dielectric loss) and superlattice structure were investigated by the cavity method and high-resolution electron microscopy. The excellent Q value of 17 600 obtained at appropriate Nb content ( x = 1 ). The disorder structure (superlattice modulation ~0.41 nm), 1:2 ordering structure (superlattice modulation ~0.71 nm) and antiphase domain boundary (APB) were revealed in Ba[Mg_(1/3)(Nb_(x/4)Ta_((4-x)/4))_(2/3)]O_3 ceramics. The formation of extra ordering structure (superlattice modulation~1.24 nm) on the APBs contributed to the improved Q value with the stabilization of ordering-induced domain boundaries.
机译:Ba [Mg_(1/3)(Nb_(x / 4)Ta _((4-x)/ 4))_(2/3)] O_3陶瓷(x = 0、1、2、3和4)固相反应法合成的产物在1650℃烧结9 h。利用腔法和高分辨率电子显微镜研究了品质因数(Q,〜1 / tanδ,tanδ:介电损耗)和超晶格结构。在适当的Nb含量(x = 1)下获得的优良的Q值为17600。在Ba [Mg_(1/3)(Nb_(x / 4)Ta_()中揭示了无序结构(超晶格调制〜0.41 nm),1:2有序结构(超晶格调制〜0.71 nm)和反相畴界(APB)。 (4-x)/ 4))_((2/3)] O_3陶瓷。在APBs上形成额外的有序结构(超晶格调制〜1.24 nm)有助于提高Q值,并稳定了有序诱导的畴边界。

著录项

  • 来源
    《Applied Physics Letters》 |2005年第10期|p.102905.1-102905.3|共3页
  • 作者单位

    Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

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