机译:Ba [Mg_(1/3)(Nb_(x / 4)Ta _((4-x)/ 4))_(2/3)] O_3陶瓷中超晶格和反相畴边界对介电损耗的影响
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China;
机译:有序结构和畴边界对低损耗Ba [Mg_(1/3)(Nb_(x / 4)Ta _((4-x)/ 4)_(2/3))O_3微波介电陶瓷的影响
机译:Ba [Mg_(1/3)(Nb_(x / 4)Ta _((4-x)/ 4)_(2/3))O_3陶瓷的微观结构特征和微波介电性能
机译:(1-x)Ba(Mg_(1/3)Ta_(2/3))O_(3-x)Ba(Co_(1/3)Nb_(2 / 3))O_3陶瓷
机译:Ba(Mg_(1/3)Ta_(2/3))O_3和Ba(Mg_(1/3)Nb_(2/3))O_3陶瓷介电损耗的本征极限
机译:晶粒尺寸对锆钛酸铅基陶瓷的相变相界附近的成分的介电和压电性能有影响。
机译:在准形相界中,$ m_B $和$ m_C $阶段的证据 区域$(1-x)[pb(mg_ {1/3} Nb_ {2/3})O_3] -xpbTiO_3 $:Rietveld研究