Perfluorocyclobutane containing polymeric gate dielectric for organic thin film transistors with high on/off ratio

摘要

A thermally cross-linkable perfluorocyclobutane (PFCB) polymer was synthesized and examined for use as the gate dielectric in organic thin film transistors (OTFTs). The PFCB polymer showed good solvent and process resistance during the photolithographic patterning of the electrodes. Bottom contact OTFTs were fabricated with poly(3-hexylthiophene)-2,5-diyl (P3HT) as the semiconductor, either spin cast or dip coated, on the PFCB gate dielectric. OTFTs fabricated with dip-coated P3HT showed a field effect mobility of 1.8 X 10~(-3) cm~2/V s and a high on/off current ratio of 8.3 X 10~6 in the saturation regime, with a source-drain voltage of V_D=-50 V.