Atomic force microscopy and x-ray photoelectron spectroscopy studies of ZnO nanoparticles on SiO_2 fabricated by ion implantation and thermal oxidation

摘要

The morphology and chemical composition of the surface of SiO_2 that had been implanted with Zn ions of 60 keV and annealed in two different atmospheres, i.e., oxygen gas and a vacuum, were compared. In the as-implanted state, the surface mainly consisted of SiO_2 with low roughness due to radiation-induced smoothing. A large number of domelike structures of ZnO appeared on the surface of the SiO_2 after annealing in oxygen gas at 600℃ for 1 h, and the size increased with the annealing temperature up to 800℃. After annealing at 900℃, the surface roughness steeply decreased and the composition changed to Zn_2SiO_4.