Light emission efficiency and dynamics in silicon-rich silicon nitride films

摘要

Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing and the SRN external quantum efficiency was measured. The SRN light emission temperature dependence and recombination dynamics were also studied. Small emission thermal quenching from 4 to 330 K with wavelength dependent, nanosecond recombination lifetime was observed. Light emission from SRN systems can provide alternative routes towards the fabrication of efficient Si-based optical devices.