Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors

摘要

An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed, and memory storage; therefore it is ideal for the three-dimensional device simulators. The authors show that even in moderately high applied fields, one can obtain the correct electronic distribution. They give the correct definition for electronic temperature and show that in high applied fields, the quasi-Fermi level and electronic temperature become valley dependent. The effect of including Pauli exclusion principle on the band profile, electronic temperature, and quasi-Fermi level for the inhomogeneous case of a single barrier heterostructure is illustrated.