Transmission measurement at 10.6 μm of Te_2As_3Se_5 rib waveguides on As_2S_3 substrate

摘要

The feasibility of chalcogenide rib waveguides working at λ = 10.6 μm has been demonstrated. The waveguides comprised a several micron thick Te_2As_3Se_5 film deposited by thermal evaporation on a polished As_2S_3 glass substrate and further etched by physical etching in Ar or CF_4/O_2 atmosphere. Output images at 10.6 μm and some propagation losses roughly estimated at 10 dB/cm proved that the obtained structures behaved as channel waveguides with a good lateral confinement of the light. The work opens the doors to the realization of components able to work in the mid- and thermal infrared up to 20 μm and even more.