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首页> 外文期刊>Applied Physicsletters >Mechanical And Electrical Coupling At Metal-insulator-metal Nanoscale Contacts
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Mechanical And Electrical Coupling At Metal-insulator-metal Nanoscale Contacts

机译:金属-绝缘体-金属纳米级触点的机械和电气耦合

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Mechanical and electrical coupling at nanoscale metallic contacts was investigated using a conducting-probe atomic force microscope (AFM). The current-voltage responses were non-Ohmic, symmetric about zero bias, with conductance values smaller than the quantum conductance limit, which indicate electron tunneling through an insulating layer. Using a self-consistent contact mechanics model and a parabolic tunneling model for thin insulating layers, we determined the contact area, barrier height, and barrier thickness as a function of applied contact load. The results suggest the presence of two insulating layers: an oxide layer on the AFM tip and an organic contaminant layer on the metallic surface.
机译:使用导电探针原子力显微镜(AFM)研究了纳米级金属触点的机械和电气耦合。电流-电压响应是非欧姆的,关于零偏压对称,其电导值小于量子电导极限,这表明电子通过绝缘层隧穿。使用用于薄绝缘层的自洽接触力学模型和抛物线隧穿模型,我们确定了接触面积,势垒高度和势垒厚度与所施加接触载荷的关系。结果表明存在两个绝缘层:AFM尖端上的氧化层和金属表面上的有机污染物层。

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