Dramatic Strain Induced Modification Of The Low Field Anisotropic Magnetoresistance In Ultrathin Manganite Films

摘要

The authors investigated the anisotropic magnetoresistance (AMR) in ultrathin La-based manganite films grown on various substrates. It was found that depending on the strain state, the AMR in some of these systems exceeds 100% and can even change sign. These changes are very dramatic when compared to the few percent change in AMR in conventional ferromagnets. The mechanism behind these large changes in the AMR is discussed.