Electro-optically Tuned Defect Mode In Structurally Chiral Materials

摘要

We considered an orthorhombic mm2 structurally chiral material, susceptible to the Pockels effect having a twist defect and subjected to a dc electric field oriented along the nonhomogeneity axis. We found that its localized mode can be tuned and the scaling of the inverse relative linewidth can be largely enhanced when the magnitudes of the field and the tilt angle of the structure are near the pseudoisotropic curve. This tuning gives rise to a dramatic variation in the behavior of the photon dwell time for the defect mode, which never reaches a maximum by increasing the sample thickness.