High-performance n-type carbon nanotube field-effect transistors with estimated sub-10-ps gate delay

摘要

High-performance top-gated n-type single-walled carbon nanotube (CNT) field-effect transistors (FETs) have been fabricated using scandium contacts and HfO_2 gate oxide and are benchmarked against the state-of-the-art n-type Si metal-oxide semiconductor FE