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Amplified spontaneous emission in quaterthiophene single crystals

机译:四噻吩单晶中的自发发射放大

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The authors demonstrate amplified spontaneous emission (ASE) from quaterthiophene single crystals and study its behavior at low temperature. The room temperature photoluminescence exhibits line narrowing (spectral width down to 10 nm) at 553 nm for excitation fluence larger than 1 mJ cm~(-2). At low temperature (10 K), ASE is observed from two vibronic transitions at 510 nm (0-1) and 553 nm (0-2), with line narrowing down to 5 A, for fluences larger than 100 μJ cm~(-2). The stimulated emission cross section is of the order of 10~(-15) cm~2, and the ASE is found to be strongly affected by thermally induced dynamic disorder. The emission stability under photopumping is also studied and discussed.
机译:作者展示了四噻吩单晶的放大自发发射(ASE)并研究了其在低温下的行为。对于大于1 mJ cm〜(-2)的激发通量,室温光致发光在553 nm处表现出谱线变窄(光谱宽度降低至10 nm)。在低温(10 K)下,对于通量大于100μJcm〜(-),在510 nm(0-1)和553 nm(0-2)的两个振动跃迁中观察到ASE,线变窄至5 A. 2)。受激发射截面约为10〜(-15)cm〜2,并且发现ASE受热诱导的动态紊乱影响很大。还研究和讨论了光泵浦下的发射稳定性。

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