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Substrate dependent charge injection at the V_2O_5/organic interface

机译:在V_2O_5 /有机界面上依赖于基质的电荷注入

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摘要

Charge injection at the interface between V_2O_5 and N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (α-NPD) was studied. It is found that the energy-level alignment at the V_2O_5/α-NPD is dependent on the underlying substrate, in contrast to previous reports. This phenomenon is consistent with interface dipole theory for weakly pinning interfaces. V_2O_5 is found to weakly pin the Fermi level, such that the underlying substrate still influences the dipole between V_2O_5 and α-NPD. The charge neutrality level of V_2O_5 is also found to be 5.35 eV.
机译:研究了在V_2O_5与N,N'-联苯-N,N'-双-(1-萘基)-1-1'-联苯-4,4'-二胺(α-NPD)之间的界面处的电荷注入。与以前的报告相反,发现在V_2O_5 /α-NPD处的能级对准取决于下面的底物。这种现象与弱耦合接口的接口偶极子理论是一致的。发现V_2O_5弱地固定了费米能级,因此下面的衬底仍然会影响V_2O_5和α-NPD之间的偶极子。还发现V_2O_5的电荷中性水平为5.35 eV。

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  • 来源
    《Applied Physicsletters》 |2009年第8期|083301.1-083301.3|共3页
  • 作者单位

    Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada;

    Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:19:50

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