Model of interface states at Ill-V oxide interfaces

摘要

We present a generalized model of the density of interface states at III-V oxide interfaces. The states are based on the native defects such as dangling bonds on the Ga and As sites or As-As bonds created by oxidation. The model explains the difficulty of n-type operation for GaAs field effect transistors (FETs) compared to GaAs pFETs or to InGaAs nFETs.