High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics

摘要

In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified SiO_2 insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified SiO_2, particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of 1.03 cm~2/V s, on/off current ratio of 1.98 × 10~5, and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.