Reduction in high reset currents in unipolar resistance switching Pt/SrTiO_x/Pt capacitors using acceptor doping

摘要

The high reset current, I_R, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, I_(comp), can work as a crucial parameter to reduce I_R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiO_x film, opening a larger operation window for I_(comp). By decreasing I_(comp) with acceptor doping, we could reduce I_R in SrTiO_x films by a factor of approximately 20. Our work suggests that the decrease in I_(comp) by carrier doping could be a viable alternative for reducing I_R in unipolar resistance switching.