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机译:掺杂Er的GaN中Er相关发光的浓度猝灭的抑制
Institute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573, Japan Institute for Solid State Physics (ISSP), University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8581, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan;
rnInstitute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573, Japan;
Institute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573, Japan;
Institute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573, Japan;
机译:掺Er GaN薄膜的光致发光热猝灭
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机译:发光传感器在氧扩散测量和金属纳米粒子发光增强/猝灭研究中的应用。
机译:来自GaN纳米线的稳定和可逆光致发光在通过离子浓度调节溶液中的稳定和可逆的光致发光
机译:掺杂Er的GaN中Er相关发光的浓度猝灭的抑制
机译:Er掺杂GaN薄膜光致发光的热猝灭