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机译:Co_2MnSi电极中膜组成对Co_2MnSi / MgO / Co_2MnSi磁性隧道结的隧道磁阻特性的影响
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;
机译:Co_2MnSi半金属化和相干隧穿在Co_2MnSi / MgO / Co_2MnSi外延磁隧道结中的巨大隧穿磁阻
机译:隧道光谱法研究全外延Co_2MnSi / MgO / Co_2MnSi磁性隧道结中Co_2MnSi电极的半金属电子结构(邀请)
机译:完全外延Co_(50)Fe_(50)缓冲的CO_2MnSi / MgO / CO_2MnSi磁性隧道结中的高隧道磁阻
机译:高隧道磁阻在完全外延CO_(50)FE_(50)-BUFFEREDCO_2MNSI / MGO / CO_2MNSI磁隧道结
机译:用新型铁磁电极设计和表征逆隧穿磁阻磁隧道结。
机译:Co2Fe6B2上下自由层结构之间基于MgO的垂直-电磁-隧道-结自旋阀的隧道-磁阻比比较
机译:Co2MnSi电极中膜组成对Co2MnSi / MgO / Co2MnSi磁性隧道结的隧道磁阻特性的影响