Analysis of the minority carrier response of n-type and p-type Au/Ni/Al_2O_3/ ln_(0.53)Ga_(0.47)As/lnP capacitors following an optimized (NH_4)_2S treatment

摘要

The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al_2O_3 on n-type and p-type In_(0.53)Ga_(0.47)As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al_2O_3/In_(0.53)Ga_(0.47)As devices following an optimized ammonium sulfide (NH_4)_2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response.