Elimination of the weak inversion hump in Si_3N4/lnGaAs (001) gate stacks using an in situ NH_3 pre-treatment

摘要

Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on Ino.53Gao.47As (001) surfaces with and without NH_3 pre-deposition treatments. The influence of the NH_3 pre-deposition treatments on the electrical properties of the Si3N47in_(0.5)3Ga_(0.47)As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on Ino.53Gao.47As capacitors.