Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

摘要

We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si_3N_4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.