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Perpendicular magnetization of Co_2FeAI full-Heusler alloy films induced by MgO interface

机译:MgO界面引起的Co_2FeAI全Heusler合金薄膜的垂直磁化

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摘要

The perpendicular magnetization of Co_2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (K_U) of 2-3 × 10~6 erg/cm~3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of K_U was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.
机译:在CFA / MgO和MgO / CFA的结构中,Co_2FeAl(CFA)全Heusler合金薄膜实现了垂直磁化,垂直磁各向异性能量密度(K_U)为2-3×10〜6 erg / cm〜3,可以用作基于MgO的磁性隧道结(MTJ)的垂直铁磁电极,在低于50 nm的尺寸下具有很高的热稳定性。在不同的退火温度下研究了K_U的CFA厚度依赖性,表明CFA的垂直各向异性是由CFA和MgO之间的界面各向异性引起的。这封信将为获得Co基全Heusler合金的垂直磁化开辟一条途径,这有望进一步降低带有垂直全Heusler合金电极的MgO基MTJ纳米柱中电流感应磁化转换的临界电流。

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  • 来源
    《Applied Physics Letters》 |2011年第24期|p.242507.1-242507.3|共3页
  • 作者单位

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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