Theoretical analysis of carrier mobility in organic field-effect transistors

摘要

A theoretical analysis of the carrier mobility in organic transistors is presented. We noticed that the assumption of zero potential at open/quasi-free surface may cause a large deviation of the areal charge density in the organic film, greater in thinner-film transistors. Taking into account this effect, the effective mobility is obtained using the Kubo-Greenwood integral, which provides the total conductivity in the band and thus in the whole organic film. The mobility is studied with respect to gate voltage and temperature, for various disorder and transport diffusivity levels, enabling a better insight of the carrier mobility in organic transistors.