Diindenoperylene as ambipolar semiconductor: Influence of electrode materials and mobility asymmetry in organic field-effect transistors

摘要

Organic field-effect transistors were prepared using diindenoperylene as molecular semiconductor. An insulating alkane layer was used to separate the semiconductor from the underlying oxide and to suppress effects of electron traps at that surface. Diindenoperylene transistors were studied for various electrode materials. Unipolar p- and n-type as well as ambipolar devices were realized. An electron mobility of up to 0.14 cm~2/V s and a hole mobility of up to 0.052 cm~2/V s were found. The temperature dependent analysis shows similar trap distributions for both carrier types. Therefore the asymmetry in electron and hole transport seems to be an intrinsic effect of diindenoperylene.