机译:改善半极性(11-22)InGaN量子点的发光和热稳定性
CEA/CNRS group "Nanophysique et semiconductors," INAC/SP2M/NPSC, CEA-Grenoble,17 rue des Martyrs, 38054 Grenoble Cedex 9, France;
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
CEA/CNRS group "Nanophysique et semiconductors," INAC/SP2M/NPSC, CEA-Grenoble,17 rue des Martyrs, 38054 Grenoble Cedex 9, France;
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;
CEA/CNRS group "Nanophysique et semiconductors," INAC/SP2M/NPSC, CEA-Grenoble,17 rue des Martyrs, 38054 Grenoble Cedex 9, France;
机译:极性(0001)和半极性(11-22)InGaN / GaN量子点的生长和表征
机译:使用松弛的底层InGaN缓冲层控制{11-22}半极性多量子阱的光偏振
机译:使用松弛的底层InGaN缓冲层控制{11-22}半极性多量子阱的光偏振
机译:在外延横向过生长的半极性(11-22)GaN上生长的InGaN / GaN量子阱的光学增强
机译:在电子耦合的pbs量子点阵列中,热激活的光致发光猝灭机理及其与传输的相关性。
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:量子点中线性偏振单光子的发射 包含在铅笔状InGaN / GaN的非极性,半极性和极性部分中 纳米线