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首页> 外文期刊>Applied Physics Letters >Electric-field-control of resistance and magnetization switching in multiferroic Zn_(0.4)Fe_(2.6)O_4/0.7Pb(Mg_(2/3)Nb_(1/3))O_3-0.3PbTiO_3 epitaxial heterostructures
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Electric-field-control of resistance and magnetization switching in multiferroic Zn_(0.4)Fe_(2.6)O_4/0.7Pb(Mg_(2/3)Nb_(1/3))O_3-0.3PbTiO_3 epitaxial heterostructures

机译：多铁性Zn_（0.4）Fe_（2.6）O_4 / 0.7Pb（Mg_（2/3）Nb_（1/3））O_3-0.3PbTiO_3外延异质结构中的电阻和磁化转换的电场控制

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摘要

Multiferroic (001)-Zn_(0.4)Fe_(2.6)O_4/0.7Pb(Mg_(2/3)Nb_(1/3))O_3-0.3PbTiO_3 (ZFO/PMN-PT) epitaxial heterostructures have been investigated to demonstrate the electric-field-controlled resistance and magnetization switching. The tunabilitiy of resistance of the ZFO film is about -0.1% under the in-plane strain -0.02% at 296 K and 0.2% for the electric field 1.0 kV/cm at 80 K, respectively, and the tunabilitiy of magnetization is about 1.1% under the in-plane strain —0.11% at 296 K, which is attributed to the controllable strain transferred into the ZFO film from the piezoelectric PMN-PT substrate. A possible microscopic mechanism of the manipulation of resistance and magnetization is the enhancement of hopping amplitude of electrons between mixed-valent Fe~(2+) and Fe~(2+) ions under the electric-field-induced in-plane compressive strain.
机译：研究了多铁（001）-Zn_（0.4）Fe_（2.6）O_4 / 0.7Pb（Mg_（2/3）Nb_（1/3））O_3-0.3PbTiO_3（ZFO / PMN-PT）外延异质结构以证明电场控制的电阻和磁化切换。 ZFO膜的电阻延展性在296 K时的面内应变-0.02％和在80 K电场下1.0 kV / cm的0.2％的面内应变下约为-0.1％，磁化的延展性约为1.1在296 K时的平面内应变为-0.11％时，电阻百分比为％，这归因于可控应变从压电PMN-PT基板转移到ZFO膜中。电阻和磁化作用的可能微观机制是在电场引起的面内压缩应变下，混合价Fe〜（2+）和Fe〜（2+）离子之间电子的跃变幅度增强。

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  • 来源
    《Applied Physics Letters》 |2011年第15期|p.153509.1-153509.3|共3页
  • 作者

    Yuanjun Yang; Z. L. Luo; Haoliang Huang; Yachun Gao; J. Bao; X. G. Li; Sen Zhang; Y. G. Zhao; Xiangcun Chen; Guoqiang Pan; C. Gao;

  • 作者单位

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    Department of Physics, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    Department of Physics, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University,Beijing 100084, People's Republic of China;

    Department of Physics, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University,Beijing 100084, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology,University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China,Department of Physics, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

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  • 入库时间 2022-08-18 03:17:54

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