Positive colossal magnetoresistance observed in Co doped amorphous carbon/silicon heterostructures

摘要

Heterostructures of Co-doped amorphous carbon (Co-C)/silicon were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. The heterostructures exhibited a positive colossal magnetoresistance (CMR) effect over a temperature range of 55-240 K. The magnetoresistance (MR) for the reverse bias voltage reached around 270% at 5 T, whereas the MR under a forward bias was 7% only. Besides, the transmission electron microscopy results demonstrate that Co atoms tended to be aggregated at Co-C/Si interface. The Co aggregation in the interface may be a possible origin of the positive CMR effect.