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首页> 外文期刊>Applied Physics Letters >Band gap tunability of molecular beam epitaxy grown lateral composition modulated GalnP structures by controlling V/lll flux ratio
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Band gap tunability of molecular beam epitaxy grown lateral composition modulated GalnP structures by controlling V/lll flux ratio

机译:通过控制V / III通量比来控制分子束外延生长的横向成分调制的GalnP结构的带隙可调性

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摘要

Lateral composition modulated (LCM) GalnP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.
机译:通过分子束外延以不同的V / III通量比在(001)GaAs衬底上生长横向成分调制(LCM)的GalnP结构。通过降低通量比,同时保持相同的光致发光强度,增强的光吸收和加宽的吸收光谱,可以将LCM结构的带隙从1.93 eV调节到1.83 eV。结果表明,对于LCM结构的带隙调整,与生长温度调整相比,通量比调整是一种更可行的方法。

著录项

  • 来源
    《Applied Physics Letters》 |2012年第5期|p.051903.1-051903.4|共4页
  • 作者

    K.W.Park; C.Y.Park; Y.T.Lee;

  • 作者单位

    School of Information and Communications, Gwangju Institute of Science and Technology,Gwangju 500-712, Republic of Korea;

    Micro Systems Laboratory, Samsung Advanced Institute of Technology,Yongin 446-712, Republic of Korea;

    School of Information and Communications, Gwangju Institute of Science and Technology,Gwangju 500-712, Republic of Korea,Department ofNanobio Materials and Electronics, Gwangju Institute of Science and Technology,Gwangju 500-712, Republic of Korea,Department of Photonics and Applied Physics, Gwangju Institute of Science and Technology,Gwangju 500-712, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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