Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors

摘要

Organic transistors that use polyelectrolytes as gate insulators can be driven at very low voltages (<1 V). The low operating voltage is possible thanks to the formation of electric double layers upon polarization, which generates large electric fields at the critical interfaces in the device structure. In this work, we use a semiconducting blend (of a high electron affinity polymer and a low ionization potential one) in conjunction with a.solid polyelectrolyte insulator to fabricate low-voltage ambipolar organic transistors. For both n- and p-channel operation, we use a polycation with readily mobile-yet large enough to limit bulk doping of the semiconductor-counterions.