Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

摘要

Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6nm Al_2O_3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2×10~(-9) A/cm~2, and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.