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The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN

机译:多晶TiN上钨化学气相沉积初期结构演化与电渗流的关系

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摘要

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 ℃, percolation effect is formed at ~35% of surface coverage, 8, and characterized with a sharp drop in resistance. At temperature below 310 ℃, a reduction in resistance occurs in two steps. The first step occurs when θ = 35% and the second step at θ = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.
机译:本文介绍了在超薄多晶氮化钛(TiN)上钨化学气相沉积从成核到渗滤过渡过程中薄层电阻和表面形态演变的实验结果和几何模型。我们观察到了降低薄层电阻的两种机制。在高于310℃的沉积温度下,渗滤作用在表面覆盖率的35%处形成,即8,并且其电阻急剧下降。在低于310℃的温度下,电阻会分两步发生。第一步发生在θ= 35%时,第二步发生在θ= 85%时。我们提出了一种几何模型,其中在碰撞发生时,电渗流通过岛的厚度阈值进行调制。

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  • 来源
    《Applied Physics Letters》 |2012年第3期|p.031907.1-031907.4|共4页
  • 作者单位

    Micron Semiconductors Israel Ltd., Qiryat-Gat 82109, Israel,Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel;

    Material Science Program, Tel Aviv University, Tel Aviv 69978, Israel;

    Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel;

    Micron Semiconductors Israel Ltd., Qiryat-Gat 82109, Israel;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:16:59

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