机译:Ge_(1-x-y)Si_xSn_y合金的基本带隙和直接间接交叉
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
机译:Ge_(1-x-y)Si_xSn_y合金带隙的成分依赖性
机译:松弛应变Ge_(1-x-y)Si_xSn_y三元合金的间接带隙跃迁
机译:y> x的Ge_(1-x-y)Si_xSn_y合金的光学性质:1550 nm以上的直接带隙
机译:通过X射线技术表征GE_(1-X-Y)SI_XSN_Y三元合金表面和NI / GE_(1-X-Y)SI_XSN_Y双层反应
机译:RPECVD制备的硅酸alloy合金的光谱研究:导带/价带偏移能和光学带隙的比较。
机译:尺寸受限的固定成分和依赖成分的工程带隙合金化在L-半胱氨酸封端的四元CdZnTeS量子点中诱导了不同的内部结构
机译:III-V直接间接带隙的准确的从头算预测 分频器
机译:si(1-x-y)Ge(x)C(y)合金的带偏移和红外探测器应用