Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb_2Te_3 nanowires

摘要

Recently, it has been theoretically predicted that Sb_2Te_3 and related materials are 3D topological insulators, a phase of matter that has a bulk bandgap and gapless electronic surface states protected by time-reversal symmetry. We report on low temperature magnetoresistance measurements on single crystalline Sb_2Te_3 nanowires with different cross sectional areas and high surface-to-volume ratios, synthesized via catalytic growth. The observation of Aharonov-Bohm oscillations and weak antilocalization indicates the presence of topological surface states.