High-power InP quantum dot based semiconductor disk laser exceeding 1.3W

摘要

We demonstrate an optically pumped semiconductor disk laser (OP-SDL) using InP quantum dots (QDs) as active material fabricated by metal-organic vapor-phase epitaxy. The QDs are grown within [(Al_(0.1)Ga_(0.9))_(0.52)In_(0.48)]_(0.5)P_(0.5)(abbr. Al_(0.1)GaInP) barriers in order to achieve an emission wavelength around 655 nm. We present optical investigations of the active region showing typical QD behavior like blue shift with increasing excitation power and single emission lines, which show anti-bunching in an intensity auto-correlation measurement. We report maximum output powers of the OP-SDL of 1.39 W at low emission wavelength of ～654nm with a slope efficiency of η_(diff)= 25.4%.